Nature

Effects of nitrogen passivation on the capture cross section energy distribution of 4H-SiC/SiO2 interface defects and the temperature dependences of leakage current

The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
Phys.org

Using machine learning to narrow down the possibilities for a better quantum tunneling interface

(a) The flowchart of the ML-interface method. (b) Atomic structures of ten Si/SiO2 interfaces with an interfacial area less than 1nm2 in periodicity. The dashed cycles in (b) highlight the unsatisfied ...
Science Daily

Unraveling the origin of extremely bright quantum emitters

A multi-institutional research team has clarified the energy levels of color centers at the SiO2/SiC interface, paving the way toward the development of scalable quantum technologies that use them as ...
科学技術振興機構

Significant performance improvement of SiC power semiconductors by developing interface defect reduction technology

Semiconductor devices based on Si (silicon) are not limited to data processing applications such as logic and memory devices for computers and communication equipment but are also widely used for ...
Nanowerk

New research advances the integration of hybrid organic-inorganic materials into molecular devices

(Nanowerk News) A group of researchers from Bell Labs, Rutgers Dept. of Chemistry, Stanford's Dept. of Chemical Engineering and the University of Konstanz's Dept. of Physics conducted the first ...