A 650-V GaN intelligent power module (IPM) from TI enables up to 99% inverter efficiency for major home appliances and HVAC systems. The DRV7308 IPM integrates 650-V, 205-mΩ e-mode GaN FETs in a half ...
In this video, Texas Instruments’ Dung Dang explains the company’s DRV7308 three-phase intelligent power module (IPM). The IPM leverages a 205-mΩ, 650-V, e-mode gallium-nitride (GaN) device to drive ...
Manufacturers of silicon carbide (SiC) and gallium nitride (GaN) power ICs leveraged the APEC 2024 conference to highlight their latest developments in wide-bandgap semiconductors. These devices offer ...
IPM power devices and gate drivers feature 600-V maximum voltage, while inverter units have a maximum operating voltage of 450 V. Specific models include the STK544UC62K-E, STK551U362A-E, ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s ...
The "Automotive-Grade Power Semiconductor and Module (SiC, GaN) Industry Research Report, 2025" has been added to ResearchAndMarkets.com's offering. SiC/GaN research indicates a significant uptick in ...
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